VP2106N3-G
Manufacturer
Microchip
Description
Microchip VP2106N3-G P-channel MOSFET Transistor; 0.25 A; 60 V; 3-Pin TO-92
Datasheet
DownloadProduct Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
TO-92
Tin
250 mA
-60 V
12 Ω
60 V
Single
5 ns
20 V
5.33 mm
60 pF
5.21 mm
Production (Last Updated: 1 year ago)
150 °C
1 W
-55 °C
Through Hole
1
1
3
Bulk
740 mW
No
12 Ω
5 ns
Compliant
8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
5 ns
4 ns
453.59237 mg
4.19 mm
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
TO-92
Tin
250 mA
-60 V
12 Ω
60 V
Single
5 ns
20 V
5.33 mm
60 pF
5.21 mm
Production (Last Updated: 1 year ago)
150 °C
1 W
-55 °C
Through Hole
1
1
3
Bulk
740 mW
No
12 Ω
5 ns
Compliant
8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
5 ns
4 ns
453.59237 mg
4.19 mm
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