STGB30M65DF2
Manufacturer
STMicroelectronics
Description
Trench gate field-stop IGBT M series, 650 V 30 A low loss
Datasheet
DownloadProduct Attributes
Type
Case/Package
China RoHS
Collector Base Breakdown Voltage (VCES)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Element Configuration
Forward Current
Forward Voltage
Lifecycle Status
Max Breakdown Voltage
Max Collector Current
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Number of Terminals
Packaging
REACH SVHC
Reverse Recovery Time
RoHS
Schedule B
Description
TO-263-3
Compliant
650 V
650 V
2 V
650 V
Single
30 A
1.85 V
Production (Last Updated: 7 months ago)
650 V
60 A
175 °C
258 W
-55 °C
Surface Mount
1
3
2
Tape and Reel
Yes
140 ns
Compliant
8541290080
In Stock
Quantity
MOQ : 1
Per Unit Price
₹378.80
Total Price
₹378.80
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹378.80
₹378.80
10
₹247.02
₹2470.20
25
₹247.02
₹6175.49
50
₹247.02
₹12350.99
100
₹172.38
₹17238.03
500
₹140.50
₹70251.25
Product Attributes
Type
Case/Package
China RoHS
Collector Base Breakdown Voltage (VCES)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Element Configuration
Forward Current
Forward Voltage
Lifecycle Status
Max Breakdown Voltage
Max Collector Current
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Number of Terminals
Packaging
REACH SVHC
Reverse Recovery Time
RoHS
Schedule B
Description
TO-263-3
Compliant
650 V
650 V
2 V
650 V
Single
30 A
1.85 V
Production (Last Updated: 7 months ago)
650 V
60 A
175 °C
258 W
-55 °C
Surface Mount
1
3
2
Tape and Reel
Yes
140 ns
Compliant
8541290080
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