Manufacturer
STMicroelectronics
Description
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
Datasheet
DownloadType
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
TO-220-3
11 A
650 V
380 mΩ
600 V
Single
15.4 ns
25 V
16.4 mm
845 pF
10.6 mm
150 °C
25 W
-55 °C
Through Hole
1
3
25 W
No
380 mΩ
10 ns
Compliant
9.6 ns
46.5 ns
4.6 mm
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
TO-220-3
11 A
650 V
380 mΩ
600 V
Single
15.4 ns
25 V
16.4 mm
845 pF
10.6 mm
150 °C
25 W
-55 °C
Through Hole
1
3
25 W
No
380 mΩ
10 ns
Compliant
9.6 ns
46.5 ns
4.6 mm
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