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SSM3K15AFU,LF
Manufacturer
Toshiba
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Mount
Number of Channels
Packaging
Power Dissipation
Rds On Max
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT-323
100 mA
30 V
2.3 Ω
30 V
20 V
1.1 mm
13.5 pF
150 °C
150 °C
150 mW
Surface Mount
1
Tape & Reel (TR)
150 mW
3.6 Ω
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
35 ns
5.5 ns
In Stock
Quantity
MOQ : 6
Per Unit Price
₹16.89
Total Price
₹101.37
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹101.37
₹101.37
10
₹10.58
₹105.81
25
₹10.55
₹263.65
50
₹10.56
₹528.18
100
₹4.37
₹437.49
500
₹4.38
₹2188.32
1000
₹3.90
₹3900.92
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Mount
Number of Channels
Packaging
Power Dissipation
Rds On Max
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT-323
100 mA
30 V
2.3 Ω
30 V
20 V
1.1 mm
13.5 pF
150 °C
150 °C
150 mW
Surface Mount
1
Tape & Reel (TR)
150 mW
3.6 Ω
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
35 ns
5.5 ns
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