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SSM3J332R,LF
Manufacturer
Toshiba
Description
Trans Mosfet P-ch Si 30V 6A 3-PIN SOT-23F T/r / Mosfet P Ch 30V 6A 2-3Z1A
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Rds On Max
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT-23-3
-6 A
-30 V
42.5 mΩ
-30 V
12 V
880 µm
560 pF
150 °C
150 °C
1 W
-55 °C
Surface Mount
1
1
3
Digi-Reel®
1 W
42 mΩ
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080
-500 mV
75 ns
15 ns
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Rds On Max
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT-23-3
-6 A
-30 V
42.5 mΩ
-30 V
12 V
880 µm
560 pF
150 °C
150 °C
1 W
-55 °C
Surface Mount
1
1
3
Digi-Reel®
1 W
42 mΩ
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080
-500 mV
75 ns
15 ns
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