SIR870ADP-T1-GE3
Manufacturer
Vishay
Description
N-Channel 100 V 6.6 mOhm 25.5 nC SMT Power MOSFET - PowerPAK-SO-8
Datasheet
DownloadProduct Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
Tin
60 A
100 V
5.5 mΩ
100 V
Single
9 ns
20 V
1.12 mm
2.866 nF
Lead Free
6.25 mm
150 °C
150 °C
104 W
-55 °C
Surface Mount
1
1
8
6.25 W
No
6.6 mΩ
Unknown
15 ns
Compliant
8541290080
1.5 V
33 ns
13 ns
506.605978 mg
5.26 mm
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
Tin
60 A
100 V
5.5 mΩ
100 V
Single
9 ns
20 V
1.12 mm
2.866 nF
Lead Free
6.25 mm
150 °C
150 °C
104 W
-55 °C
Surface Mount
1
1
8
6.25 W
No
6.6 mΩ
Unknown
15 ns
Compliant
8541290080
1.5 V
33 ns
13 ns
506.605978 mg
5.26 mm
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