SI7454DDP-T1-GE3
Manufacturer
Vishay
Description
VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SO
21 A
100 V
100 V
Single
9 ns
20 V
1.12 mm
550 pF
Lead Free
6.25 mm
150 °C
150 °C
29.7 W
-55 °C
Surface Mount
1
1
8
29.7 W
No
33 mΩ
Unknown
33 MΩ
13 ns
Compliant
8541290080
3 V
16 ns
10 ns
5.26 mm
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SO
21 A
100 V
100 V
Single
9 ns
20 V
1.12 mm
550 pF
Lead Free
6.25 mm
150 °C
150 °C
29.7 W
-55 °C
Surface Mount
1
1
8
29.7 W
No
33 mΩ
Unknown
33 MΩ
13 ns
Compliant
8541290080
3 V
16 ns
10 ns
5.26 mm
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