SI4128DY-T1-GE3
Manufacturer
Vishay
Description
MOSFET; N-Ch; Vds 30V; Vgs +/- 20V; Rds(on) 20mohm; Id 10.9A; SO-8; Pd 5W
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOIC
10.9 A
30 V
24 mΩ
30 V
Single
10 ns
20 V
1.5 mm
435 pF
Lead Free
5 mm
150 °C
5 W
-55 °C
Surface Mount
1
1
8
2.4 W
No
24 mΩ
Unknown
24 mΩ
12 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
1 V
15 ns
15 ns
186.993455 mg
4 mm
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOIC
10.9 A
30 V
24 mΩ
30 V
Single
10 ns
20 V
1.5 mm
435 pF
Lead Free
5 mm
150 °C
5 W
-55 °C
Surface Mount
1
1
8
2.4 W
No
24 mΩ
Unknown
24 mΩ
12 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
1 V
15 ns
15 ns
186.993455 mg
4 mm
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.