SI2369DS-T1-GE3
Manufacturer
Vishay
Description
Single P-Channel 30 V 0.04 Ohm 17 nC 1.25 W Silicon SMT Mosfet - SOT-23
Datasheet
DownloadProduct Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT-23-3
Tin
-7.6 A
-30 V
24 mΩ
-30 V
20 V
1.12 mm
1.295 nF
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
1
3
Cut Tape (CT)
1.25 W
No
29 mΩ
No SVHC
Compliant
8541290080
-1.2 V
38 ns
13 ns
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT-23-3
Tin
-7.6 A
-30 V
24 mΩ
-30 V
20 V
1.12 mm
1.295 nF
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
1
3
Cut Tape (CT)
1.25 W
No
29 mΩ
No SVHC
Compliant
8541290080
-1.2 V
38 ns
13 ns
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