SI2347DS-T1-GE3
Manufacturer
Vishay
Description
P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3
Datasheet
DownloadProduct Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Description
SOT-23
Tin
3.8 A
-30 V
68 mΩ
-30 V
Single
9 ns
20 V
1.12 mm
705 pF
Lead Free
150 °C
150 °C
1.7 W
-55 °C
Surface Mount
1
1
3
1.7 W
No
42 mΩ
No SVHC
6 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
-2.5 V
19 ns
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Description
SOT-23
Tin
3.8 A
-30 V
68 mΩ
-30 V
Single
9 ns
20 V
1.12 mm
705 pF
Lead Free
150 °C
150 °C
1.7 W
-55 °C
Surface Mount
1
1
3
1.7 W
No
42 mΩ
No SVHC
6 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
-2.5 V
19 ns
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