SI2323DDS-T1-GE3
Manufacturer
Vishay
Description
SI2323DDS-T1-GE3 P-channel MOSFET Transistor; 4.3 A; 20 V; 3-Pin TO-236
Datasheet
DownloadProduct Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT-23
Tin
-5.3 A
-20 V
32 mΩ
-20 V
Single
11 ns
8 V
1.12 mm
1.16 nF
Lead Free
150 °C
150 °C
1.7 W
-55 °C
Surface Mount
1
3
Cut Tape (CT)
960 mW
No
39 mΩ
No SVHC
22 ns
Compliant
8541210080
-1 V
52 ns
8 ns
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT-23
Tin
-5.3 A
-20 V
32 mΩ
-20 V
Single
11 ns
8 V
1.12 mm
1.16 nF
Lead Free
150 °C
150 °C
1.7 W
-55 °C
Surface Mount
1
3
Cut Tape (CT)
960 mW
No
39 mΩ
No SVHC
22 ns
Compliant
8541210080
-1 V
52 ns
8 ns
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