SI2301BDS-T1-E3
Manufacturer
Vishay
Description
Mosfet, P-ch, Vdss -20V, Rds(on) 0.08 Ohm, Id -2.2A, TO-236 (SOT-23), Pd 0.7W, Vgs +/-8V
Datasheet
DownloadProduct Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-23
Tin
-2.2 A
-20 V
100 mΩ
-20 V
Single
40 ns
8 V
1.02 mm
375 pF
Lead Free
3.04 mm
150 °C
150 °C
700 mW
-55 °C
Surface Mount
-950 mV
1
1
3
Cut Tape
700 mW
No
100 mΩ
Unknown
100 MΩ
40 ns
Compliant
8541210080
-950 mV
30 ns
20 ns
1.437803 g
1.4 mm
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-23
Tin
-2.2 A
-20 V
100 mΩ
-20 V
Single
40 ns
8 V
1.02 mm
375 pF
Lead Free
3.04 mm
150 °C
150 °C
700 mW
-55 °C
Surface Mount
-950 mV
1
1
3
Cut Tape
700 mW
No
100 mΩ
Unknown
100 MΩ
40 ns
Compliant
8541210080
-950 mV
30 ns
20 ns
1.437803 g
1.4 mm
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