SCTW90N65G2V
Manufacturer
STMicroelectronics
Description
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Voltage (Vdss)
Lifecycle Status
Max Power Dissipation
Rds On Max
RoHS
Schedule B
Description
119 A
650 V
Production (Last Updated: 3 years ago)
565 W
24 mΩ
Compliant
8541290080
In Stock
Quantity
MOQ : 1
Per Unit Price
₹2022.04
Total Price
₹2022.04
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹2022.04
₹2022.04
10
₹2021.86
₹20218.63
25
₹2021.83
₹50545.68
50
₹2021.83
₹101091.37
100
₹2021.82
₹202181.85
500
₹2021.82
₹1010909.25
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Voltage (Vdss)
Lifecycle Status
Max Power Dissipation
Rds On Max
RoHS
Schedule B
Description
119 A
650 V
Production (Last Updated: 3 years ago)
565 W
24 mΩ
Compliant
8541290080
Other Parts in the same category
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.