PSMN1R8-40YLC,115
Manufacturer
Nexperia
Description
N-channel 40 V 1.8 m logic level MOSFET in LFPAK using NextPower technology
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lifecycle Status
Manufacturer Lifecycle Status
Max Dual Supply Voltage
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT
100 A
1.5 mΩ
40 V
31.7 ns
20 V
6.68 nF
Production (Last Updated: 4 months ago)
RELEASED FOR SUPPLY (Last Updated: 4 months ago)
40 V
175 °C
272 W
-55 °C
1
4
Tape & Reel
272 W
No
1.8 mΩ
37 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
62.5 ns
32.2 ns
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lifecycle Status
Manufacturer Lifecycle Status
Max Dual Supply Voltage
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
SOT
100 A
1.5 mΩ
40 V
31.7 ns
20 V
6.68 nF
Production (Last Updated: 4 months ago)
RELEASED FOR SUPPLY (Last Updated: 4 months ago)
40 V
175 °C
272 W
-55 °C
1
4
Tape & Reel
272 W
No
1.8 mΩ
37 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
62.5 ns
32.2 ns
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