Manufacturer
Nexperia
Description
MOSFET Transistor, P Channel, -3.2 A, -20 V, 0.077 ohm, -4.5 V, -680 mV
Datasheet
DownloadType
Ambient Temperature Range High
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Rds On Max
Rise Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
150 °C
TO-236-3
Tin
-3.2 A
-20 V
77 mΩ
-20 V
50 ns
-12 V
1.1 mm
550 pF
Production (Last Updated: 1 day ago)
RELEASED FOR SUPPLY (Last Updated: 1 day ago)
150 °C
150 °C
490 mW
-55 °C
Surface Mount
1
3
Tape & Reel (TR)
490 mW
102 mΩ
14 ns
Compliant
120 ns
6 ns
Type
Ambient Temperature Range High
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Rds On Max
Rise Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
150 °C
TO-236-3
Tin
-3.2 A
-20 V
77 mΩ
-20 V
50 ns
-12 V
1.1 mm
550 pF
Production (Last Updated: 1 day ago)
RELEASED FOR SUPPLY (Last Updated: 1 day ago)
150 °C
150 °C
490 mW
-55 °C
Surface Mount
1
3
Tape & Reel (TR)
490 mW
102 mΩ
14 ns
Compliant
120 ns
6 ns
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