PMBFJ620,115
Manufacturer
NXP Semiconductors
Description
NXP PMBFJ620, 115 JFET Transistor, -25 V, 24 mA, 60 mA, -6.5 V, SOT-363, JFET
Datasheet
DownloadProduct Attributes
Type
Breakdown Voltage
Case/Package
China RoHS
Contact Plating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Breakdown Voltage
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Number of Terminals
Packaging
Power Dissipation
Radiation Hardening
REACH SVHC
RoHS
Termination
Weight
Width
Description
-25 V
TSSOP
Compliant
Tin
25 V
50 Ω
25 V
Dual
-25 V
1 mm
5 pF
Lead Free
2.2 mm
Obsolete (Last Updated: 7 months ago)
150 °C
190 mW
25 V
-65 °C
Surface Mount
2
6
6
Digi-Reel®
190 mW
No
Yes
Compliant
SMD/SMT
6.010099 mg
1.35 mm
Out of Stock
Quantity
MOQ : Unavailable
Per Unit Price
Unavailable
Total Price
Unavailable
Ships in 7-10 days from Bengaluru
Product Attributes
Type
Breakdown Voltage
Case/Package
China RoHS
Contact Plating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Breakdown Voltage
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Number of Terminals
Packaging
Power Dissipation
Radiation Hardening
REACH SVHC
RoHS
Termination
Weight
Width
Description
-25 V
TSSOP
Compliant
Tin
25 V
50 Ω
25 V
Dual
-25 V
1 mm
5 pF
Lead Free
2.2 mm
Obsolete (Last Updated: 7 months ago)
150 °C
190 mW
25 V
-65 °C
Surface Mount
2
6
6
Digi-Reel®
190 mW
No
Yes
Compliant
SMD/SMT
6.010099 mg
1.35 mm
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.