Manufacturer
onsemi
Description
NTD2955T4G P-channel MOSFET Transistor; 12 A; 60 V; 3-Pin DPAK
Datasheet
DownloadType
Case/Package
Contact Plating
Continuous Drain Current (ID)
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Width
Description
DPAK
Tin
12 A
-12 A
-60 V
155 mΩ
-60 V
Single
48 ns
20 V
2.38 mm
750 pF
Lead Free
6.73 mm
Production (Last Updated: 1 year ago)
ACTIVE (Last Updated: 1 year ago)
175 °C
55 W
-55 °C
-2.8 V
1
1
3
Tape and Reel
55 W
No
180 mΩ
No SVHC
180 mΩ
45 ns
Compliant
8541290080
-2.8 V
26 ns
10 ns
-60 V
6.22 mm
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Width
Description
DPAK
Tin
12 A
-12 A
-60 V
155 mΩ
-60 V
Single
48 ns
20 V
2.38 mm
750 pF
Lead Free
6.73 mm
Production (Last Updated: 1 year ago)
ACTIVE (Last Updated: 1 year ago)
175 °C
55 W
-55 °C
-2.8 V
1
1
3
Tape and Reel
55 W
No
180 mΩ
No SVHC
180 mΩ
45 ns
Compliant
8541290080
-2.8 V
26 ns
10 ns
-60 V
6.22 mm
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