JANS2N2222A
Manufacturer
Microchip
Description
TRANS NPN 50V 0.8A TO18 Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-18 (TO-206AA)
Product Attributes
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Emitter Base Voltage (VEBO)
Height
hFE Min
Lifecycle Status
Max Collector Current
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
Radiation Hardening
RoHS
Schedule B
Description
TO-18
75 V
50 V
1 V
50 V
Lead, Tin
6 V
5.33 mm
100
Production (Last Updated: 6 months ago)
800 mA
200 °C
200 °C
500 mW
-65 °C
Through Hole
1
3
NPN
500 mW
No
Non-Compliant
8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Product Attributes
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Emitter Base Voltage (VEBO)
Height
hFE Min
Lifecycle Status
Max Collector Current
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
Radiation Hardening
RoHS
Schedule B
Description
TO-18
75 V
50 V
1 V
50 V
Lead, Tin
6 V
5.33 mm
100
Production (Last Updated: 6 months ago)
800 mA
200 °C
200 °C
500 mW
-65 °C
Through Hole
1
3
NPN
500 mW
No
Non-Compliant
8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
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