Manufacturer
Infineon
Description
N CH POWER MOSFET, HEXFET, 100V, 180A, D2PAK; Transistor Polarity: N Channel; Con
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
D2PAK
180 A
100 V
3.4 mΩ
100 V
Single
170 ns
16 V
5.084 mm
11.36 nF
Lead Free
10.668 mm
Production (Last Updated: 4 years ago)
175 °C
175 °C
370 W
-55 °C
Surface Mount
2.5 V
1
1
3
4.3 mΩ
800
370 W
No
4.3 mΩ
Unknown
3.9 MΩ
330 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
110 ns
74 ns
9.65 mm
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
D2PAK
180 A
100 V
3.4 mΩ
100 V
Single
170 ns
16 V
5.084 mm
11.36 nF
Lead Free
10.668 mm
Production (Last Updated: 4 years ago)
175 °C
175 °C
370 W
-55 °C
Surface Mount
2.5 V
1
1
3
4.3 mΩ
800
370 W
No
4.3 mΩ
Unknown
3.9 MΩ
330 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
110 ns
74 ns
9.65 mm
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