Manufacturer
Infineon
Description
Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET Power Mosfet - PQFN 2 x 2 mm
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Manufacturer Package Identifier
Min Operating Temperature
Mount
Nominal Vgs
Number of Pins
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
3.6 A
30 V
48 mΩ
30 V
Dual
9.4 ns
12 V
270 pF
Lead Free
Production (Last Updated: 4 years ago)
150 °C
150 °C
1.5 W
PG-TSDSON-6
-55 °C
Surface Mount
800 mV
6
4000
Tape & Reel
1.5 W
No
63 mΩ
No SVHC
11 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
800 mV
11 ns
4.4 ns
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Manufacturer Package Identifier
Min Operating Temperature
Mount
Nominal Vgs
Number of Pins
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
3.6 A
30 V
48 mΩ
30 V
Dual
9.4 ns
12 V
270 pF
Lead Free
Production (Last Updated: 4 years ago)
150 °C
150 °C
1.5 W
PG-TSDSON-6
-55 °C
Surface Mount
800 mV
6
4000
Tape & Reel
1.5 W
No
63 mΩ
No SVHC
11 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
800 mV
11 ns
4.4 ns
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.