IRFSL7430PBF
Manufacturer
Infineon
Description
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Rds On Max
REACH SVHC
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Description
TO-263-3
195 A
40 V
970 µΩ
40 V
20 V
15.01 mm
14.24 nF
Production (Last Updated: 4 years ago)
175 °C
175 °C
375 W
-55 °C
Surface Mount
1
3
1.3 mΩ
1000
375 W
1.2 mΩ
No SVHC
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
3.9 V
160 ns
32 ns
2.084002 g
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Rds On Max
REACH SVHC
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Description
TO-263-3
195 A
40 V
970 µΩ
40 V
20 V
15.01 mm
14.24 nF
Production (Last Updated: 4 years ago)
175 °C
175 °C
375 W
-55 °C
Surface Mount
1
3
1.3 mΩ
1000
375 W
1.2 mΩ
No SVHC
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
3.9 V
160 ns
32 ns
2.084002 g
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