Manufacturer
Infineon
Description
Single N-Channel 150V 12.1 mOhm 120 nC HEXFET Power Mosfet - D2PAK
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
D2PAK
99 A
150 V
10.3 mΩ
150 V
Single
39 ns
20 V
5.084 mm
5.27 nF
Lead Free
10.668 mm
Production (Last Updated: 4 years ago)
175 °C
175 °C
375 W
-55 °C
Surface Mount
1
3
12.1 mΩ
800
375 W
No
12.1 mΩ
11.8 MΩ
73 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
41 ns
18 ns
9.652 mm
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
D2PAK
99 A
150 V
10.3 mΩ
150 V
Single
39 ns
20 V
5.084 mm
5.27 nF
Lead Free
10.668 mm
Production (Last Updated: 4 years ago)
175 °C
175 °C
375 W
-55 °C
Surface Mount
1
3
12.1 mΩ
800
375 W
No
12.1 mΩ
11.8 MΩ
73 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
41 ns
18 ns
9.652 mm
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