Manufacturer
Infineon
Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
D2PAK
110 A
60 V
3.3 mΩ
60 V
Single
77 ns
20 V
5.084 mm
4.52 nF
Lead Free
10.668 mm
Production (Last Updated: 4 years ago)
175 °C
175 °C
230 W
-55 °C
Surface Mount
4 V
1
1
3
4.2 mΩ
800
230 W
No
4.2 mΩ
No SVHC
46 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
4 V
40 ns
15 ns
9.65 mm
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
D2PAK
110 A
60 V
3.3 mΩ
60 V
Single
77 ns
20 V
5.084 mm
4.52 nF
Lead Free
10.668 mm
Production (Last Updated: 4 years ago)
175 °C
175 °C
230 W
-55 °C
Surface Mount
4 V
1
1
3
4.2 mΩ
800
230 W
No
4.2 mΩ
No SVHC
46 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
4 V
40 ns
15 ns
9.65 mm
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