Manufacturer
Infineon
Description
INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
Datasheet
DownloadType
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
QFN
100 A
60 V
4.1 mΩ
60 V
12 ns
20 V
990.6 µm
4.175 nF
Lead Free
6.1468 mm
Production (Last Updated: 2 years ago)
150 °C
150 °C
3.6 W
-55 °C
Surface Mount
2 V
1
8
4.1 mΩ
4000
Tape & Reel
250 W
No
4.1 mΩ
No SVHC
4.1 MΩ
13 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
2 V
30 ns
9.6 ns
5.15 mm
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
QFN
100 A
60 V
4.1 mΩ
60 V
12 ns
20 V
990.6 µm
4.175 nF
Lead Free
6.1468 mm
Production (Last Updated: 2 years ago)
150 °C
150 °C
3.6 W
-55 °C
Surface Mount
2 V
1
8
4.1 mΩ
4000
Tape & Reel
250 W
No
4.1 mΩ
No SVHC
4.1 MΩ
13 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
2 V
30 ns
9.6 ns
5.15 mm
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