IRFB7530PBF
Manufacturer
Infineon
Description
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220 package, TO220-3, RoHS
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
TO-220-3
195 A
60 V
1.65 mΩ
60 V
Single
104 ns
20 V
16.51 mm
13.703 nF
Lead Free
10.67 mm
Production (Last Updated: 2 years ago)
175 °C
175 °C
375 W
-55 °C
Through Hole
3
2 mΩ
1000
375 W
2 mΩ
No SVHC
141 ns
Compliant
8541290080|8541290080|8541290080|8541290080|8541290080
3.7 V
172 ns
52 ns
6.000006 g
4.83 mm
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
TO-220-3
195 A
60 V
1.65 mΩ
60 V
Single
104 ns
20 V
16.51 mm
13.703 nF
Lead Free
10.67 mm
Production (Last Updated: 2 years ago)
175 °C
175 °C
375 W
-55 °C
Through Hole
3
2 mΩ
1000
375 W
2 mΩ
No SVHC
141 ns
Compliant
8541290080|8541290080|8541290080|8541290080|8541290080
3.7 V
172 ns
52 ns
6.000006 g
4.83 mm
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