IRFB7440PBF
Manufacturer
Infineon
Description
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Recovery Time
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
TO-220AB
120 A
40 V
2 mΩ
40 V
Single
20 V
16.51 mm
4.73 nF
Lead Free
10.67 mm
Production (Last Updated: 2 years ago)
175 °C
175 °C
143 W
-55 °C
Through Hole
3 V
1
1
3
2.5 mΩ
1000
208 W
No
2.5 mΩ
No SVHC
24 ns
2.5 MΩ
68 ns
Compliant
8541290080
3 V
115 ns
24 ns
4.83 mm
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Recovery Time
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
TO-220AB
120 A
40 V
2 mΩ
40 V
Single
20 V
16.51 mm
4.73 nF
Lead Free
10.67 mm
Production (Last Updated: 2 years ago)
175 °C
175 °C
143 W
-55 °C
Through Hole
3 V
1
1
3
2.5 mΩ
1000
208 W
No
2.5 mΩ
No SVHC
24 ns
2.5 MΩ
68 ns
Compliant
8541290080
3 V
115 ns
24 ns
4.83 mm
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