IRF9540NS
Manufacturer
Infineon
Description
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Datasheet
DownloadProduct Attributes
Type
Case/Package
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Lead Free
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
REACH SVHC
Rise Time
RoHS
Termination
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Description
TO-263
-23 A
-100 V
117 mΩ
-100 V
51 ns
20 V
Contains Lead
175 °C
140 W
-55 °C
Surface Mount
-4 V
1
3
Bulk
3.8 W
No
No SVHC
67 ns
Non-Compliant
SMD/SMT
-4 V
51 ns
15 ns
-100 V
Product Attributes
Type
Case/Package
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Lead Free
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
REACH SVHC
Rise Time
RoHS
Termination
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Description
TO-263
-23 A
-100 V
117 mΩ
-100 V
51 ns
20 V
Contains Lead
175 °C
140 W
-55 °C
Surface Mount
-4 V
1
3
Bulk
3.8 W
No
No SVHC
67 ns
Non-Compliant
SMD/SMT
-4 V
51 ns
15 ns
-100 V
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.