Manufacturer
Infineon
Description
Single P-Channel 30V 6.8 mOhm 58 nC HEXFET Power Mosfet - SOIC-8
Datasheet
DownloadType
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SOIC
Tin
-20 A
-30 V
5.8 mΩ
-30 V
Single
70 ns
20 V
1.4986 mm
5.25 nF
Lead Free
4.9784 mm
Production (Last Updated: 2 years ago)
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
-1.8 V
1
1
8
4.6 mΩ
4000
Tape & Reel
2.5 W
No
4.6 mΩ
No SVHC
4.6 MΩ
47 ns
Compliant
8541290080
-1.8 V
65 ns
25 ns
3.9878 mm
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SOIC
Tin
-20 A
-30 V
5.8 mΩ
-30 V
Single
70 ns
20 V
1.4986 mm
5.25 nF
Lead Free
4.9784 mm
Production (Last Updated: 2 years ago)
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
-1.8 V
1
1
8
4.6 mΩ
4000
Tape & Reel
2.5 W
No
4.6 mΩ
No SVHC
4.6 MΩ
47 ns
Compliant
8541290080
-1.8 V
65 ns
25 ns
3.9878 mm
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