IRF7910TRPBF
Manufacturer
Infineon
Description
MOSFET, Power; Dual N-Ch; VDSS 12V; RDS(ON) 11.5 Milliohms; ID 10A; SO-8; PD 2W; -55deg
Datasheet
DownloadProduct Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Resistance
Rise Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SO
Tin
10 A
12 V
15 mΩ
12 V
Single
6.3 ns
12 V
1.4986 mm
1.73 nF
Lead Free
4.9784 mm
150 °C
2 W
-55 °C
Surface Mount
8
2 W
No
15 mΩ
15 MΩ
22 ns
Compliant
16 ns
9.4 ns
3.9878 mm
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Resistance
Rise Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SO
Tin
10 A
12 V
15 mΩ
12 V
Single
6.3 ns
12 V
1.4986 mm
1.73 nF
Lead Free
4.9784 mm
150 °C
2 W
-55 °C
Surface Mount
8
2 W
No
15 mΩ
15 MΩ
22 ns
Compliant
16 ns
9.4 ns
3.9878 mm
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