Manufacturer
Vishay
Description
IRF510PBF N-channel MOSFET Transistor; 5.6 A; 100 V; 3-Pin TO-220AB
Datasheet
DownloadType
Case/Package
Contact Plating
Continuous Drain Current (ID)
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Recovery Time
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Weight
Width
Description
TO-220AB
Tin
5.6 A
5.6 A
100 V
540 mΩ
100 V
Single
9.4 ns
20 V
9.01 mm
180 pF
Lead Free
10.41 mm
175 °C
43 W
-55 °C
Through Hole
4 V
1
1
3
Bulk
43 W
No
540 mΩ
Unknown
200 ns
540 mΩ
16 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
4 V
15 ns
6.9 ns
100 V
6.000006 g
4.7 mm
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Recovery Time
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Weight
Width
Description
TO-220AB
Tin
5.6 A
5.6 A
100 V
540 mΩ
100 V
Single
9.4 ns
20 V
9.01 mm
180 pF
Lead Free
10.41 mm
175 °C
43 W
-55 °C
Through Hole
4 V
1
1
3
Bulk
43 W
No
540 mΩ
Unknown
200 ns
540 mΩ
16 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
4 V
15 ns
6.9 ns
100 V
6.000006 g
4.7 mm
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