Manufacturer
Infineon
Description
Single N-Channel 55 V 3.3 mOhm 290 nC HEXFET Power Mosfet - D2PAK
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
D2PAK
160 A
55 V
2.6 mΩ
55 V
Single
87 ns
20 V
4.83 mm
7.96 nF
Lead Free
10.668 mm
Production (Last Updated: 4 years ago)
175 °C
175 °C
300 W
-55 °C
Surface Mount
1
1
3
3.3 mΩ
800
130 W
No
3.3 mΩ
No SVHC
3.3 MΩ
20 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
4 V
93 ns
150 ns
9.652 mm
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
D2PAK
160 A
55 V
2.6 mΩ
55 V
Single
87 ns
20 V
4.83 mm
7.96 nF
Lead Free
10.668 mm
Production (Last Updated: 4 years ago)
175 °C
175 °C
300 W
-55 °C
Surface Mount
1
1
3
3.3 mΩ
800
130 W
No
3.3 mΩ
No SVHC
3.3 MΩ
20 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
4 V
93 ns
150 ns
9.652 mm
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