IPD90P03P4L04ATMA1
Manufacturer
Infineon
Description
Single P-Channel 30 V 4.1 mOhm 125 nC OptiMOS Power Mosfet - TO-252-3-11
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Halogen Free
Height
Lead Free
Lifecycle Status
Max Dual Supply Voltage
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
DPAK
-90 A
-30 V
3.3 mΩ
-30 V
40 ns
5 V
Halogen Free
2.5 mm
Contains Lead
NRND (Last Updated: 2 years ago)
-30 V
175 °C
175 °C
-55 °C
Surface Mount
1
1
3
4.5 mΩ
2500
Tape & Reel
137 W
No
11 ns
Compliant
8541290080
-1.5 V
140 ns
17 ns
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Halogen Free
Height
Lead Free
Lifecycle Status
Max Dual Supply Voltage
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
DPAK
-90 A
-30 V
3.3 mΩ
-30 V
40 ns
5 V
Halogen Free
2.5 mm
Contains Lead
NRND (Last Updated: 2 years ago)
-30 V
175 °C
175 °C
-55 °C
Surface Mount
1
1
3
4.5 mΩ
2500
Tape & Reel
137 W
No
11 ns
Compliant
8541290080
-1.5 V
140 ns
17 ns
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