IPB054N08N3GATMA1
Manufacturer
Infineon
Description
Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS Power Mosfet - D2PAK
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Halogen Free
Input Capacitance
Lead Free
Lifecycle Status
Max Dual Supply Voltage
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-263
80 A
4.6 mΩ
80 V
10 ns
20 V
Halogen Free
3.57 nF
Contains Lead
Production (Last Updated: 2 years ago)
80 V
175 °C
150 W
-55 °C
Surface Mount
1
3
5.4 mΩ
1000
Tape & Reel
150 W
No SVHC
66 ns
Compliant
8541290080
2.8 V
38 ns
18 ns
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Halogen Free
Input Capacitance
Lead Free
Lifecycle Status
Max Dual Supply Voltage
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-263
80 A
4.6 mΩ
80 V
10 ns
20 V
Halogen Free
3.57 nF
Contains Lead
Production (Last Updated: 2 years ago)
80 V
175 °C
150 W
-55 °C
Surface Mount
1
3
5.4 mΩ
1000
Tape & Reel
150 W
No SVHC
66 ns
Compliant
8541290080
2.8 V
38 ns
18 ns
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