FZT853TA
Manufacturer
Diodes Inc.
Description
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Datasheet
DownloadProduct Attributes
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Continuous Collector Current
Current Rating
Element Configuration
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
Lead Free
Length
Max Breakdown Voltage
Max Collector Current
Max Frequency
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
Radiation Hardening
REACH SVHC
RoHS
Schedule B
Transition Frequency
Voltage Rating (DC)
Weight
Width
Description
SOT-223
200 V
100 V
340 mV
100 V
Tin
6 A
6 A
Single
6 V
130 MHz
130 MHz
1.65 mm
Lead Free
6.7 mm
100 V
6 A
130 MHz
150 °C
3 W
-55 °C
Surface Mount
1
4
NPN
3 W
No
No SVHC
Compliant
8541290080
130 MHz
100 V
7.994566 mg
3.7 mm
Product Attributes
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Continuous Collector Current
Current Rating
Element Configuration
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
Lead Free
Length
Max Breakdown Voltage
Max Collector Current
Max Frequency
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
Radiation Hardening
REACH SVHC
RoHS
Schedule B
Transition Frequency
Voltage Rating (DC)
Weight
Width
Description
SOT-223
200 V
100 V
340 mV
100 V
Tin
6 A
6 A
Single
6 V
130 MHz
130 MHz
1.65 mm
Lead Free
6.7 mm
100 V
6 A
130 MHz
150 °C
3 W
-55 °C
Surface Mount
1
4
NPN
3 W
No
No SVHC
Compliant
8541290080
130 MHz
100 V
7.994566 mg
3.7 mm
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