Manufacturer
onsemi
Description
P-Channel 30 V 21.8 mOhm 2.5 W Power Trench Mosfet - SOIC-8
Datasheet
DownloadType
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Dual Supply Voltage
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Termination
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOIC
Tin
11 A
-30 V
10.8 mΩ
30 V
-30 V
Single
60 ns
25 V
1.5 mm
2.47 nF
Lead Free
5 mm
Production (Last Updated: 1 year ago)
ACTIVE (Last Updated: 1 year ago)
150 °C
2.5 W
-55 °C
Surface Mount
-2 V
1
8
Cut Tape
2.5 W
No
13 mΩ
No SVHC
21.8 MΩ
7.8 ns
Compliant
8541290080
SMD/SMT
-2 V
120 ns
3 ns
130 mg
4 mm
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Dual Supply Voltage
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Termination
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOIC
Tin
11 A
-30 V
10.8 mΩ
30 V
-30 V
Single
60 ns
25 V
1.5 mm
2.47 nF
Lead Free
5 mm
Production (Last Updated: 1 year ago)
ACTIVE (Last Updated: 1 year ago)
150 °C
2.5 W
-55 °C
Surface Mount
-2 V
1
8
Cut Tape
2.5 W
No
13 mΩ
No SVHC
21.8 MΩ
7.8 ns
Compliant
8541290080
SMD/SMT
-2 V
120 ns
3 ns
130 mg
4 mm
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