Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Weight
Width
Description
SOIC
Tin
-8.8 A
-8.8 A
-30 V
16 mΩ
-30 V
Single
38 ns
25 V
1.5 mm
1.845 nF
Lead Free
5 mm
Production (Last Updated: 1 year ago)
ACTIVE (Last Updated: 1 year ago)
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
-2.1 V
1
1
8
2.5 W
No
20 mΩ
No SVHC
20 MΩ
13 ns
Compliant
8541290080
-2.1 V
30 ns
10 ns
-30 V
130 mg
4 mm
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Weight
Width
Description
SOIC
Tin
-8.8 A
-8.8 A
-30 V
16 mΩ
-30 V
Single
38 ns
25 V
1.5 mm
1.845 nF
Lead Free
5 mm
Production (Last Updated: 1 year ago)
ACTIVE (Last Updated: 1 year ago)
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
-2.1 V
1
1
8
2.5 W
No
20 mΩ
No SVHC
20 MΩ
13 ns
Compliant
8541290080
-2.1 V
30 ns
10 ns
-30 V
130 mg
4 mm
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