Manufacturer
Diodes Inc.
Description
P-Channel 60 V 28 mO 53.1 nC SMT Enhancement Mode Mosfet - SOT-223
Datasheet
DownloadType
Capacitance
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Packaging
Rds On Max
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
2.569 nF
TO-261-4
18.2 A
-60 V
28 mΩ
-60 V
Single
62 ns
20 V
1.6 mm
2.569 nF
6.5 mm
150 °C
150 °C
2 W
-55 °C
Surface Mount
1
Tape & Reel (TR)
28 mΩ
7.1 ns
Compliant
8541290080
110 ns
6 ns
188.014037 mg
3.5 mm
Type
Capacitance
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Packaging
Rds On Max
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
2.569 nF
TO-261-4
18.2 A
-60 V
28 mΩ
-60 V
Single
62 ns
20 V
1.6 mm
2.569 nF
6.5 mm
150 °C
150 °C
2 W
-55 °C
Surface Mount
1
Tape & Reel (TR)
28 mΩ
7.1 ns
Compliant
8541290080
110 ns
6 ns
188.014037 mg
3.5 mm
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