DMP10H4D2S-7
Manufacturer
Diodes Inc.
Description
DMP10H4D2S Series 100V 270 mA P-Channel Enhancement Mode Mosfet - SOT-23-3
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Power Dissipation
Rds On Max
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-236-3
-270 mA
-100 V
2.8 Ω
-100 V
20 V
1.1 mm
87 pF
150 °C
150 °C
380 mW
-55 °C
Surface Mount
1
380 mW
4.2 Ω
Compliant
8541210080
8.4 ns
3.3 ns
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Power Dissipation
Rds On Max
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-236-3
-270 mA
-100 V
2.8 Ω
-100 V
20 V
1.1 mm
87 pF
150 °C
150 °C
380 mW
-55 °C
Surface Mount
1
380 mW
4.2 Ω
Compliant
8541210080
8.4 ns
3.3 ns
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