Manufacturer
Diodes Inc.
Description
N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Datasheet
DownloadType
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-23
Tin
4.2 A
30 V
24 mΩ
30 V
Single
6.18 ns
20 V
1 mm
386 pF
Lead Free
2.9 mm
150 °C
150 °C
1.4 W
-55 °C
Surface Mount
1.5 V
1
1
3
Cut Tape
1.4 W
28 mΩ
No SVHC
28 mΩ
6.18 ns
Compliant
8541290080
1.5 V
13.92 ns
3.41 ns
7.994566 mg
1.3 mm
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-23
Tin
4.2 A
30 V
24 mΩ
30 V
Single
6.18 ns
20 V
1 mm
386 pF
Lead Free
2.9 mm
150 °C
150 °C
1.4 W
-55 °C
Surface Mount
1.5 V
1
1
3
Cut Tape
1.4 W
28 mΩ
No SVHC
28 mΩ
6.18 ns
Compliant
8541290080
1.5 V
13.92 ns
3.41 ns
7.994566 mg
1.3 mm
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