DMN3190LDW-7
Manufacturer
Diodes Inc.
Description
Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-363
1 A
30 V
122 mΩ
30 V
Dual
15.6 ns
20 V
1.1 mm
87 pF
Lead Free
2.2 mm
150 °C
150 °C
320 mW
-55 °C
Surface Mount
2
6
320 mW
No
190 mΩ
8.9 ns
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
30.3 ns
4.5 ns
6.010099 mg
1.35 mm
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-363
1 A
30 V
122 mΩ
30 V
Dual
15.6 ns
20 V
1.1 mm
87 pF
Lead Free
2.2 mm
150 °C
150 °C
320 mW
-55 °C
Surface Mount
2
6
320 mW
No
190 mΩ
8.9 ns
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
30.3 ns
4.5 ns
6.010099 mg
1.35 mm
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