DMN26D0UFB4-7
Manufacturer
Diodes Inc.
Description
Single N-Channel 20 V 350 mW Silicon Surface Mount Mosfet - DFN-3
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
DFN
240 mA
20 V
1.8 Ω
20 V
Single
15.2 ns
10 V
350 µm
14.1 pF
Lead Free
1.05 mm
150 °C
150 °C
350 mW
-55 °C
Surface Mount
1
1
3
350 mW
No
3 Ω
No SVHC
10 Ω
7.9 ns
Compliant
8541210080
13.4 ns
3.8 ns
650 µm
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
DFN
240 mA
20 V
1.8 Ω
20 V
Single
15.2 ns
10 V
350 µm
14.1 pF
Lead Free
1.05 mm
150 °C
150 °C
350 mW
-55 °C
Surface Mount
1
1
3
350 mW
No
3 Ω
No SVHC
10 Ω
7.9 ns
Compliant
8541210080
13.4 ns
3.8 ns
650 µm
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