Manufacturer
Diodes Inc.
Description
Transistor: N-MOSFET; unipolar; 20V; 2.2A; 0, 09ohm; 0.66W; -55+150 st.C; SMD; SOT23
Datasheet
DownloadType
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Power Dissipation
Rds On Max
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-236-3
2.8 A
20 V
61 mΩ
20 V
12 V
1.1 mm
130 pF
150 °C
150 °C
660 mW
-55 °C
Surface Mount
1
660 mW
90 mΩ
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
4.2 ns
600 ps
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Power Dissipation
Rds On Max
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-236-3
2.8 A
20 V
61 mΩ
20 V
12 V
1.1 mm
130 pF
150 °C
150 °C
660 mW
-55 °C
Surface Mount
1
660 mW
90 mΩ
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
4.2 ns
600 ps
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