DMG1024UV-7
Manufacturer
Diodes Inc.
Description
Transistor MOSFET Array Dual N-CH 20V 1.38A 6-Pin SOT-563 T/R
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-563
1.38 A
20 V
300 mΩ
20 V
Dual
12.3 ns
6 V
600 µm
60.67 pF
Lead Free
1.7 mm
150 °C
530 mW
-55 °C
Surface Mount
2
2
6
530 mW
No
450 mΩ
No SVHC
10 Ω
7.4 ns
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
26.7 ns
5.1 ns
3.005049 mg
1.25 mm
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-563
1.38 A
20 V
300 mΩ
20 V
Dual
12.3 ns
6 V
600 µm
60.67 pF
Lead Free
1.7 mm
150 °C
530 mW
-55 °C
Surface Mount
2
2
6
530 mW
No
450 mΩ
No SVHC
10 Ω
7.4 ns
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
26.7 ns
5.1 ns
3.005049 mg
1.25 mm
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