Manufacturer
Diodes Inc.
Description
DMG1013UW Series 20 V 750 mOhm P-Channel Enhancement Mode Mosfet - SOT-323
Datasheet
DownloadType
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-323
Tin
820 mA
20 V
1.5 Ω
20 V
Single
20.7 ns
6 V
1 mm
59.76 pF
Lead Free
2.2 mm
150 °C
310 mW
-55 °C
Surface Mount
1
1
3
310 mW
No
750 mΩ
No SVHC
750 mΩ
8.1 ns
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
-1 V
28.4 ns
5.1 ns
6.010099 mg
1.35 mm
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-323
Tin
820 mA
20 V
1.5 Ω
20 V
Single
20.7 ns
6 V
1 mm
59.76 pF
Lead Free
2.2 mm
150 °C
310 mW
-55 °C
Surface Mount
1
1
3
310 mW
No
750 mΩ
No SVHC
750 mΩ
8.1 ns
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
-1 V
28.4 ns
5.1 ns
6.010099 mg
1.35 mm
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