CSD88539ND
Manufacturer
Texas Instruments
Description
60-V, N channel NexFET power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Thickness
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOIC
Gold
15 A
60 V
23 mΩ
60 V
Dual
4 ns
20 V
1.75 mm
741 pF
Lead Free
4.9 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
2.1 W
-55 °C
Surface Mount
2
2
8
Digi-Reel®
2.1 W
No
28 mΩ
No SVHC
9 ns
Compliant
1.58 mm
3 V
5 ns
6 ns
540.001716 mg
3.91 mm
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Thickness
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOIC
Gold
15 A
60 V
23 mΩ
60 V
Dual
4 ns
20 V
1.75 mm
741 pF
Lead Free
4.9 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
2.1 W
-55 °C
Surface Mount
2
2
8
Digi-Reel®
2.1 W
No
28 mΩ
No SVHC
9 ns
Compliant
1.58 mm
3 V
5 ns
6 ns
540.001716 mg
3.91 mm
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