CSD87312Q3E
Manufacturer
Texas Instruments
Description
Transistor MOSFET Array Dual N-CH 30V 27A 8-Pin VSON EP T/R
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Rds On Max
Rise Time
RoHS
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Gold
27 A
30 V
31 mΩ
30 V
Dual
2.8 ns
10 V
1.05 mm
1.25 nF
Contains Lead
3.3 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
2
2
8
Digi-Reel®
2.5 W
33 mΩ
16 ns
Compliant
900 µm
17 ns
7.8 ns
3.3 mm
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Packaging
Power Dissipation
Rds On Max
Rise Time
RoHS
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Gold
27 A
30 V
31 mΩ
30 V
Dual
2.8 ns
10 V
1.05 mm
1.25 nF
Contains Lead
3.3 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
2
2
8
Digi-Reel®
2.5 W
33 mΩ
16 ns
Compliant
900 µm
17 ns
7.8 ns
3.3 mm
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