CSD19536KCS
Manufacturer
Texas Instruments
Description
100-V, N channel NexFET power MOSFET, single TO-220, 2.7 mOhm 3-TO-220 -55 to 175
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Power Dissipation
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Thickness
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
TO-220
Tin
150 A
100 V
2.3 mΩ
100 V
Single
5 ns
20 V
4.7 mm
12 nF
Lead Free
10.16 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
175 °C
175 °C
375 W
-55 °C
Through Hole
1
3
375 W
2.7 mΩ
No SVHC
8 ns
Compliant
8541290080
4.58 mm
2.5 V
38 ns
14 ns
6.000006 g
8.7 mm
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Power Dissipation
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Thickness
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
TO-220
Tin
150 A
100 V
2.3 mΩ
100 V
Single
5 ns
20 V
4.7 mm
12 nF
Lead Free
10.16 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
175 °C
175 °C
375 W
-55 °C
Through Hole
1
3
375 W
2.7 mΩ
No SVHC
8 ns
Compliant
8541290080
4.58 mm
2.5 V
38 ns
14 ns
6.000006 g
8.7 mm
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