CSD18543Q3A
Manufacturer
Texas Instruments
Description
60-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm 8-VSONP -55 to 150
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Number of Pins
Power Dissipation
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
35 A
8.1 mΩ
60 V
Single
20 V
900 µm
3.3 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
150 °C
-55 °C
1
8
66 W
Compliant
8541290080
800 µm
8 ns
9 ns
3.3 mm
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Number of Pins
Power Dissipation
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
35 A
8.1 mΩ
60 V
Single
20 V
900 µm
3.3 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
150 °C
-55 °C
1
8
66 W
Compliant
8541290080
800 µm
8 ns
9 ns
3.3 mm
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