CSD18502Q5B
Manufacturer
Texas Instruments
Description
40-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Thickness
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Tin
100 A
40 V
2.5 mΩ
40 V
Single
4 ns
20 V
1.05 mm
5.07 nF
Contains Lead
5 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
3.2 W
-55 °C
Surface Mount
1
8
Digi-Reel®
3.2 W
No
2.3 mΩ
No SVHC
6.8 ns
Compliant
8541290080
950 µm
1.8 V
23 ns
5.3 ns
5 mm
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Thickness
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Tin
100 A
40 V
2.5 mΩ
40 V
Single
4 ns
20 V
1.05 mm
5.07 nF
Contains Lead
5 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
3.2 W
-55 °C
Surface Mount
1
8
Digi-Reel®
3.2 W
No
2.3 mΩ
No SVHC
6.8 ns
Compliant
8541290080
950 µm
1.8 V
23 ns
5.3 ns
5 mm
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