CSD17578Q3AT
Manufacturer
Texas Instruments
Description
30-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 9.4 mOhm 8-VSONP -55 to 150
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Rds On Max
Rise Time
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Tin
20 A
8.2 mΩ
30 V
Single
1 ns
20 V
1.59 nF
Lead Free
3.3 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
3.2 W
-55 °C
Surface Mount
1
8
Tape & Reel (TR)
7.3 mΩ
6 ns
Compliant
8541290080
800 µm
13 ns
2 ns
3.3 mm
Product Attributes
Type
Contact Plating
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Rds On Max
Rise Time
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
Tin
20 A
8.2 mΩ
30 V
Single
1 ns
20 V
1.59 nF
Lead Free
3.3 mm
Production (Last Updated: 4 days ago)
ACTIVE (Last Updated: 4 days ago)
150 °C
3.2 W
-55 °C
Surface Mount
1
8
Tape & Reel (TR)
7.3 mΩ
6 ns
Compliant
8541290080
800 µm
13 ns
2 ns
3.3 mm
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